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Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials

Technical Report ·
DOI:https://doi.org/10.2172/10121170· OSTI ID:10121170
;  [1];  [2]; ;  [3];  [4]; ;  [5]
  1. Michigan Technological Univ., Houghton, MI (United States). Dept. of Physics
  2. Bell Communications, Red Bank, NJ (United States)
  3. Sandia National Labs., Albuquerque, NM (United States)
  4. Army Research Labs., Fort Monmouth, NJ (United States)
  5. Brookhaven National Lab., Upton, NY (United States)
Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(ZrTi)O{sub 3} (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO{sub 2} electrodes, or by laser ablation with La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrodes. The RuO{sub 2} and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} layers was observed indicating an increase in neutral or negatively charged open-volume defects.
Research Organization:
Brookhaven National Lab., Upton, NY (United States); Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC02-76CH00016; AC04-94AL85000
OSTI ID:
10121170
Report Number(s):
BNL--60717; CONF-941144--65; ON: DE95007696; GB0103012
Country of Publication:
United States
Language:
English