Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials

doi:https://doi.org/10.2172/10121170

Title: Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials

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Abstract

Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(ZrTi)O{sub 3} (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO{sub 2} electrodes, or by laser ablation with La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrodes. The RuO{sub 2} and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} layers was observed indicating an increase in neutral or negatively charged open-volume defects.

Authors:

Krishnan, A; Keeble, D J ^[1]; Ramesh, R ^[2]; Warren, W L; Tuttle, B A ^[3]; Pfeffer, R L ^[4]; Nielsen, B; Lynn, K G ^[5]

Michigan Technological Univ., Houghton, MI (United States). Dept. of Physics
Bell Communications, Red Bank, NJ (United States)
Sandia National Labs., Albuquerque, NM (United States)
Army Research Labs., Fort Monmouth, NJ (United States)
Brookhaven National Lab., Upton, NY (United States)

Publication Date:: 1994-12-31

Research Org.:: Brookhaven National Lab., Upton, NY (United States); Sandia National Labs., Albuquerque, NM (United States)

Sponsoring Org.:: USDOE, Washington, DC (United States)

OSTI Identifier:: 10121170

Report Number(s):: BNL-60717; CONF-941144-65
ON: DE95007696; GB0103012; TRN: AHC29509%%179

DOE Contract Number:: AC02-76CH00016; AC04-94AL85000

Resource Type:: Technical Report

Resource Relation:: Conference: Fall meeting of the Materials Research Society (MRS),Boston, MA (United States),28 Nov - 9 Dec 1994; Other Information: PBD: [1994]

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; PZT; VACANCIES; FERROELECTRIC MATERIALS; RUTHENIUM OXIDES; LANTHANUM OXIDES; STRONTIUM OXIDES; COBALT OXIDES; EXPERIMENTAL DATA; CRYSTALLIZATION; 360202; 665100; STRUCTURE AND PHASE STUDIES; NUCLEAR TECHNIQUES IN CONDENSED MATTER PHYSICS

Citation Formats


                    Krishnan, A, Keeble, D J, Ramesh, R, Warren, W L, Tuttle, B A, Pfeffer, R L, Nielsen, B, and Lynn, K G. Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials.  United States: N. p., 1994. 
        Web.  doi:10.2172/10121170.

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                    Krishnan, A, Keeble, D J, Ramesh, R, Warren, W L, Tuttle, B A, Pfeffer, R L, Nielsen, B, & Lynn, K G. Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials.  United States.  https://doi.org/10.2172/10121170

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                    Krishnan, A, Keeble, D J, Ramesh, R, Warren, W L, Tuttle, B A, Pfeffer, R L, Nielsen, B, and Lynn, K G. Sat .  
        "Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials".  United States.  https://doi.org/10.2172/10121170.  https://www.osti.gov/servlets/purl/10121170.

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@article{osti_10121170,

  title        = {Vacancy related defects in thin film Pb(ZrTi)O{sub 3} materials},

  author       = {Krishnan, A and Keeble, D J and Ramesh, R and Warren, W L and Tuttle, B A and Pfeffer, R L and Nielsen, B and Lynn, K G},

  abstractNote = {Positron annihilation techniques have been applied to characterize vacancy-related defects in ferroelectric thin film structures. Variable energy positron beam measurements were carried out on doped and undoped Pb(ZrTi)O{sub 3} (PZT) samples subjected to different post-deposition cool down and anneal conditions. The PZT was deposited by sol-gel with either with platinum or RuO{sub 2} electrodes, or by laser ablation with La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrodes. The RuO{sub 2} and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} electrode samples showed a smaller S-parameter compared to those deposited with Pt electrodes consistent with an improved PZT layer quality. For laser ablated samples cooled in a reducing ambient an increase in S-parameter for both the PZT and La{sub 0.5}Sr{sub 0.5}CoO{sub 3} layers was observed indicating an increase in neutral or negatively charged open-volume defects.},

  doi          = {10.2172/10121170},

  url          = {https://www.osti.gov/biblio/10121170},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1994},

  month        = {12}

}

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Technical Report:

View Technical Report (0.39 MB)

https://doi.org/10.2172/10121170

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