Ultra-smooth dry etching of GaAs using a hydrogen plasma pretreatment
- Sandia National Labs., Albuquerque, NM (United States)
- AT & T Bell Labs., Murray Hill, NJ (United States)
The authors have attained extremely smooth etched surfaces on GaAs using a hydrogen plasma pretreatment before etching. The resultant morphology exhibits smooth surfaces since the etching proceeds uniformly through the GaAs without micromasking effects arising from a nonuniform surface oxide. They report the effects of hydrogen plasma treatments before RIE of GaAs in two different reactors using a SiCl{sub 4} plasma. Optimization of H{sub 2} plasma pretreatments has produced improvements in RMS roughness greater than 1 order of magnitude (22.4 to 1.51 nm).
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10115207
- Report Number(s):
- SAND--93-1501C; CONF-931108--41; ON: DE94005246; BR: GB0103012
- Country of Publication:
- United States
- Language:
- English
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