Rapid localization of IC open conductors using charge-induced voltage alteration (CIVA) [Book Chapter]

Cole, Jr., Edward I.; Anderson, Richard E.

doi:10.1109/RELPHY.1992.187659

Rapid localization of IC open conductors using charge-induced voltage alteration (CIVA) [Book Chapter]

Conference · Tue Dec 31 19:00:00 EST 1991 · 30th Annual Proceedings Reliability Physics 1992

DOI:https://doi.org/10.1109/RELPHY.1992.187659· OSTI ID:10111904

Cole, Jr., Edward I. ^[1]; Anderson, Richard E. ^[1]

Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Charged-Induced Voltage Alternation (CIVA) is a new scanning electron microscopy technique developed to localize open conductors on both passivated and ICs. CIVA overcomes the limitations usually encountered in localizing open conductors. CIVA images are produced by monitoring the voltage fluctuations of a constant current power supply as an electron beam is scanned over the IC surface. Contrast variations in the CIVA images are generated only from the electrically open portion of a conductor. Because of this high selectivity, CIVA facilitates localization of open interconnections on an entire IC in a single, unprocessed image. The equipment needed to implement CIVA and examples of applying the technique to several failed CMOS ICs are described. Possible radiation effects and methods to minimize them are also discussed.

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-76DP00789

OSTI ID:: 10111904

Report Number(s):: SAND--91-1850C; CONF-920327--1; ON: DE92004481

Journal Information:: 30th Annual Proceedings Reliability Physics 1992, Journal Name: 30th Annual Proceedings Reliability Physics 1992

Publisher:: IEEE

Country of Publication:: United States

Language:: English

References (5)

Irradiation effects on passivated NMOS-transistors caused by electron beam testing Görlich, S.; Kubalek, E. Microelectronic Engineering, Vol. 1, Issue 2 https://doi.org/10.1016/0167-9317(83)90023-0	journal	October 1983
Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments Fleetwood, D. M.; Winokur, P. S.; Schwank, J. R. IEEE Transactions on Nuclear Science, Vol. 35, Issue 6 https://doi.org/10.1109/23.25487	journal	January 1988
Electrical properties and detection methods for CMOS IC defects Soden, J. M.; Hawkins, C. F. [1989] Proceedings of the 1st European Test Conference https://doi.org/10.1109/ETC.1989.36238	conference	August 2002
Kinetics of Contact Wearout for Silicided (TiSi2) and Non-Silicided Contacts Ondrusek, J. C.; Dunn, C. F.; McPherson, J. W. 25th International Reliability Physics Symposium https://doi.org/10.1109/IRPS.1987.362172	conference	April 1987
Resistive contrast imaging applied to multilevel interconnection failure analysis Cole, E. I. Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference https://doi.org/10.1109/VMIC.1989.78020	conference	January 1989

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Rapid localization of IC open conductors using charge-induced voltage alteration (CIVA) [Book Chapter]

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