Electric-field dependence of electroreflectance and photocurrent spectra at visible wavelengths in MOVPE-grown InAlGaP multiple strained quantum-well structures

Conference · Thu Dec 30 23:00:00 EST 1993

OSTI ID:10111399

Fritz, I J; Blum, O; Schneider, Jr, R P; Howard, A J; Follstaedt, D M

The authors present electric-field dependent electroreflectance and photocurrent spectra of visible-bandgap In{sub x}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}x}P/In{sub x{prime}}(Al{sub y{prime}}Ga{sub 1{minus}y{prime}}){sub 1{minus}x{prime}}P multiple-quantum-well (MQW) structures. These structures, grown by metal-organic vapor phase epitaxy on 6{degrees}-misoriented (100) GaAs substrates, have undoped MQWs sandwiched between doped In{sub 0.5}Al{sub 0.5}P layers, forming p-i-n diodes. Quantum-well compositions in the range 0.46{le}x{le}0.52 and 0{le}y{le}0.4, corresponding to bandgaps in the red to yellow-green range, were used. The Stark shifts in these various samples were measured and found to depend on the details of the Mg p-type doping profile, confirming important diffusion effects, in agreement with secondary ion mass spectrometry and capacitance-voltage data. The results show that these new materials are promising for visible-wavelength optical modulator applications.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10111399
• Report Number(s): SAND--93-1529C; CONF-931108--20; ON: DE94004692
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601
360606
ALUMINIUM PHOSPHIDES
DIFFUSION
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRO-OPTICAL EFFECTS
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM PHOSPHIDES
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PREPARATION AND MANUFACTURE
SPECTRA
STARK EFFECT
VAPOR PHASE EPITAXY
VISIBLE RADIATION