Non-destructive characterization of porous silicon using X-ray reflectivity

Conference · Sun Jan 01 04:00:00 EST 1995

OSTI ID:10108377

Chason, E; Guilinger, T R; Kelly, M J; Headley, T J; Howard, A J

Understanding the evolution of porous silicon (PS) layers at the early stages of growth is important for determining the mechanism of PS film growth and controlling the film properties. We have used X-ray reflectivity (XRR) to determine the evolution of layer thickness and interfacial roughness during the growth of thin PS layers (< 200 mn) prepared by electrochemical anodization. The porous layer grows at a constant rate for films as thin as 15 mn indicating a very short incubation period during which the surface may be electropolished before the PS structure begins to form. Interface roughness measurements indicate that the top surface of the film remains relatively smooth during growth while the roughness of the PS/silicon interface increases only slightly with film thickness. The XRR results are compared with results obtained from the same films by cross-sectional transmission electron microscopy (XTEM), atomic force microscopy (AFM) and gravimetry.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 10108377
• Report Number(s): SAND--94-1653C; CONF-941144--24; ON: DE95004766
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602
665100
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANODIZATION
BORON
DOPED MATERIALS
ELECTROCHEMICAL COATING
FILMS
GRAVIMETRIC ANALYSIS
MATERIALS TESTING
MICROSTRUCTURE
NONDESTRUCTIVE TESTING
NUCLEAR TECHNIQUES IN CONDENSED MATTER PHYSICS
QUALITATIVE CHEMICAL ANALYSIS
REFLECTIVITY
SILICON
STRUCTURE AND PHASE STUDIES
SUBSTRATES
SURFACE PROPERTIES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY