A statistical analysis of the effect of PECVD deposition parameters on surface and bulk recombination in silicon solar cells
- Sandia National Labs., Albuquerque, NM (United States)
- Univ. of New Mexico, Albuquerque, NM (United States)
We have performed a statistically designed multiparameter experiment using response surface methodology to determine the optimum deposition and anneal conditions for PECVD silicon-oxide and silicon-nitride films on Si solar cells. Our process includes a unique in situ hydrogen plasma treatment to promote bulk defect passivation independently of surface effects. Our goal has been to define a process to optimize cell performance by minimizing recombination while also providing an effective antireflection coating. Our initial results show that excellent emitter-surface passivation, approaching that of the best thermally grown oxides, can be obtained using a single-layer nitride coating whose refractive index is optimized for antireflection purposes. Use of the PECVD-nitride instead of a TiO{sub 2} ARC resulted in an 11% increase in output power.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 10107901
- Report Number(s):
- SAND--94-1557C; CONF-941203--16; ON: DE95004780
- Country of Publication:
- United States
- Language:
- English
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