Strain engineering to control the magnetic and magnetotransport properties of La0.67Sr0.33MnO3 thin films

Journal Article · Fri Jan 01 04:00:00 EST 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3484147· OSTI ID:1010584

Yang, Fan ^[1]; Kemik, Nihan ^[1]; Biegalski, Michael D ^[1]; Christen, Hans M ^[1]; Arenholz, Elke ^[2]; Takamura, Yayoi ^[1]

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1. ORNL
2. Lawrence Berkeley National Laboratory (LBNL)

Strain engineering can be used to tailor the magnetic and magnetotransport properties of La0.67Sr0.33MnO3 thin films by varying the tetragonal distortion (c/a ratio) between a compressive strain of 1.005 and a tensile strain of 0.962 through the choice of the substrate type and the presence of a buffer layer. We find that increasing the tensile tetragonal distortion of the La0.67Sr0.33MnO3 thin film decreases the saturation magnetization, changes the temperature dependence of the resistivity and magnetoresistance, and increases the resistivity by several orders of magnitude.

• Research Organization: Oak Ridge National Laboratory (ORNL); Center for Nanophase Materials Sciences
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1010584
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 97; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BUFFERS
MAGNETIZATION
MAGNETORESISTANCE
SATURATION
STRAINS
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS