Analysis of the thermoelectric properties of n-type ZnO
Journal Article
·
· Physical Review B
- IHPC, Singapore
- ORNL
We report an investigation of the temperature- and doping-dependent thermoelectric behavior of n-type ZnO. The results are based on a combination of experimental data from the literature and calculated transport functions obtained from Boltzmann transport theory applied to the first-principles electronic structure. From this we obtain the dependence of the figure of merit ZT on doping and temperature. We find that improvement of the lattice thermal conductivity is essential for obtaining high ZT in n-type ZnO.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1010579
- Journal Information:
- Physical Review B, Vol. 83, Issue 11; ISSN 1098--0121
- Country of Publication:
- United States
- Language:
- English
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