Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

A finite element analysis of room temperature silicon crystals for the Advanced Photon Source bending-magnet and insertion-device beams

Technical Report ·
DOI:https://doi.org/10.2172/10105457· OSTI ID:10105457
The third generation of synchrotron radiation sources, such as the Advanced Photon Source (APS), will provide users with a high brilliance x-ray beam with high power and power densities. In many cases, the first optical component to intercept the x-ray beam is a silicon-crystal monochromator. Due to extreme heat loading, the photon throughput and brilliance will be severely degraded if the monochromator is not properly designed (or cooled). This document describes a series of finite element analyses performed on room temperature silicon for the three standard APS sources, namely, the bending magnet, Wiggler A, and Undulator A. The modeling is performed with the silicon cooled directly with water or liquid gallium through rectangular channels. The temperature distributions and thermally induced deformations are presented.
Research Organization:
Argonne National Lab., IL (United States). Advanced Photon Source Accelerator Systems Div.
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
10105457
Report Number(s):
ANL/APS/TB--19; ON: DE95004343
Country of Publication:
United States
Language:
English