Response of a Nb/Al{sub 2}O{sub 3}/Nb tunnel junction to picosecond electrical pulses

Conference · Tue Sep 01 04:00:00 EDT 1992

OSTI ID:10105263

Karadi, C; Verghese, S; Mears, C A; Orenstein, J O; Richards, P L ^[1]; Barfknecht, A T ^[2]

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1. Lawrence Berkeley Lab., CA (United States)
2. Conductus, Inc., Sunnyvale, CA (United States)

Picosecond electrical pulses were used to measure the broadband quasiparticle response of a Nb trilayer SIS (superconductor-insulator-superconductor) junction in both the linear and nonlinear regimes. The electrical pulses were generated by illuminating a Si photoconducting switch using a Ti-sapphire laser. The SIS response is inferred by measuring the dc current induced by interfering two electrical pulses at the junction, as a function of the time delay between them. Results are obtained for bias voltages of 1.0 and 2.0 mV; at the latter, two-photon absorption was detected.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 10105263
• Report Number(s): LBL--32901; CONF-930150--1; ON: DE93002625
• Country of Publication: United States
• Language: English

Related Subjects

665400
665412
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM OXIDES
CORRELATIONS
ELECTRIC CURRENTS
NIOBIUM
PHOTONS
PULSES
QUANTUM PHYSICS ASPECTS OF CONDENSED MATTER
QUASI PARTICLES
RESPONSE FUNCTIONS
SUPERCONDUCTING DEVICES
SUPERCONDUCTING JUNCTIONS
TIME DEPENDENCE
TUNNEL EFFECT