Nucleation and Growth of MOCVD Grown (Cr, Zn)O Films: Uniform Doping vs Secondary Phase Formation

Journal Article · Tue Oct 14 00:00:00 EDT 2008 · J. Electrochem. Soc.

DOI:https://doi.org/10.1149/1.2424422· OSTI ID:1007555

Saraf, L V; Engelhard, M H; Nachimuthu, P; Shutthanandan, V; Wang, C M; Heald, S M; McCready, D E; Lea, A S; Baer, D R; Chambers, S A ^[1]

---

1. PNNL

We have investigated Cr solubility and secondary phase formation in metallorganic chemical vapor deposition (MOCVD) grown (Cr, Zn)O films on Si(100). Simultaneous deposition of 0.15 M Cr(TMHD) and 0.025 M Zn(TMHD) precursors in an oxidizing environment with a flow ratio of 1:10 resulted in secondary phase formation rather than uniform Cr doping. Based on several surface and microstructural techniques, we have identified nanocrystalline ZnCr{sub 2}O{sub 4} and disordered Cr{sub 2}O{sub 3} as the secondary Cr-containing phases. Analysis suggests that ZnCr{sub 2}O{sub 4} crystallites are dispersed throughout the film, and that disordered Cr{sub 2}O{sub 3} layer may form at the interface. These results are consistent with the tendency of Cr to exhibit octahedral, rather than tetrahedral coordination with O.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
• Sponsoring Organization: USDOE
• OSTI ID: 1007555
• Journal Information: J. Electrochem. Soc., Vol. 154, Issue (3) ; 2007; ISSN 0013-4651
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
DEPOSITION
NUCLEATION
SOLUBILITY