Spin polarized current injection through HgBr{sub 2} intercalated Bi2212 intrinsic Josephson junctions.
- Materials Science Division
To investigate the effect of polarized current on tunneling characteristics of intrinsic Josephson junctions (IJJs), spin-polarized and spin-degenerate current have been injected through the c-axis of HgBr{sub 2} intercalated Bi{sub 2.1}Sr{sub 1.5}Ca{sub 1.4}Cu{sub 2}O{sub 8+delta} (Bi2212) single crystals on which 10 times 10 mum{sup 2} mesas have been fabricated. These two spin conditions are achieved by depositing either Au (15 nm)/Co (80 nm)/Au (156 nm) multilayers or single Au film on HgBr{sub 2} intercalated Bi2212 with T{sub c} = 74 K followed by photolithography and Ar ion beam etching. The I-V characteristics have been measured with and without a magnetic field parallel to c-axis at 4.2 K. A fine, soft Au wire is used to make a gentle mechanical contact on the top of a particular mesa in the array. Tunneling conductance characteristics were obtained and the magnetic field dependence of sumgap voltage peaks was investigated. These peaks do not change in position with increasing magnetic field for both contact configurations. In addition, the temperature dependence of tunneling characteristics of the IJJs are obtained and existence of pseudogap feature is observed above T{sub c} for HgBr{sub 2} intercalated Bi2212.
- Research Organization:
- Argonne National Laboratory (ANL)
- Sponsoring Organization:
- SC; Scientific and Technical Council of Turkey; Turkish Academy of Science
- DOE Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1007400
- Report Number(s):
- ANL/MSD/CP-68474
- Journal Information:
- IEEE Trans. Appl. Supercond., Journal Name: IEEE Trans. Appl. Supercond. Journal Issue: 2 ; Jun. 2007 Vol. 17; ISSN 1051-8223
- Country of Publication:
- United States
- Language:
- ENGLISH
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