Interface structure of epitaxial graphene grown on 4H-SiC(0001)

Journal Article · Fri Jun 12 04:00:00 EDT 2009 · Phys. Rev. B

DOI:https://doi.org/10.1103/PhysRevB.78.205424· OSTI ID:1007085

Hass, J; Millán-Otoya, J E; First, P N; Conrad, E H ^[1]

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1. GIT

We present a structural analysis of the graphene-4HSiC(0001) interface using surface x-ray reflectivity. We find that the interface is composed of an extended reconstruction of two SiC bilayers. The interface directly below the first graphene sheet is an extended layer that is more than twice the thickness of a bulk SiC bilayer ({approx}1.7 {angstrom} compared to 0.63 {angstrom}). The distance from this interface layer to the first graphene sheet is much smaller than the graphite interlayer spacing but larger than the same distance measured for graphene grown on the (000{bar 1}) surface, as predicted previously by ab initio calculations.

• Research Organization: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
• Sponsoring Organization: USDOE
• OSTI ID: 1007085
• Journal Information: Phys. Rev. B, Journal Name: Phys. Rev. B Journal Issue: (20) ; 2008 Vol. 78; ISSN 1098-0121
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GRAPHITE
REFLECTIVITY
THICKNESS