Melting curve of silicon to 15 GPa determined by two-dimensional angle-dispersive diffraction using a Kawai-type apparatus with X-ray transparent sintered diamond anvils

Journal Article · Wed Oct 08 04:00:00 EDT 2008 · J. Phys. Chem. Solids

DOI:https://doi.org/10.1016/j.jpcs.2008.04.025· OSTI ID:1006867

Kubo, A; Wang, Y; Runge, C E; Uchida, T; Kiefer, B; Nishiyama, N; Duffy, T S ^[1]

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1. Princeton

The melting curve of silicon has been determined up to 15 GPa using a miniaturized Kawai-type apparatus with second-stage cubic anvils made of X-ray transparent sintered diamond. Our results are in good agreement with the melting curve determined by electrical resistivity measurements [V.V. Brazhkin, A.G. Lyapin, S.V. Popova, R.N. Voloshin, Nonequilibrium phase transitions and amorphization in Si, Si/GaAs, Ge, and Ge/GaSb at the decompression of high-pressure phases, Phys. Rev. B 51 (1995) 7549] up to the phase I (diamond structure)-phase II ({beta}-tin structure)-liquid triple point. The triple point of phase XI (orthorhombic, Imma)-phase V (simple hexagonal)-liquid has been constrained to be at 14.4(4) GPa and 1010(5) K. These results demonstrate that the combination of X-ray transparent anvils and monochromatic diffraction with area detectors offers a reliable technique to detect melting at high pressures in the multianvil press.

• Research Organization: Advanced Photon Source (APS), Argonne National Laboratory (ANL), Argonne, IL (US)
• Sponsoring Organization: USDOE
• OSTI ID: 1006867
• Journal Information: J. Phys. Chem. Solids, Journal Name: J. Phys. Chem. Solids Journal Issue: (9) ; 09, 2008 Vol. 69; ISSN 0022-3697; ISSN JPCSAW
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
47 OTHER INSTRUMENTATION
ELECTRIC CONDUCTIVITY
MEASURING INSTRUMENTS
MELTING
PRESSURE RANGE GIGA PA
SILICON
TRIPLE POINT