Wetting behavior in the Al-Si/SiC system: Interface reactions and solubility effects

Journal Article · Tue Aug 01 04:00:00 EDT 1995 · Acta Metallurgica et Materialia

DOI:https://doi.org/10.1016/0956-7151(95)00014-M· OSTI ID:100603

Ferro, A C; Derby, B ^[1]

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1. Univ. of Oxford (United Kingdom). Dept. of Materials

The sessile drop technique was used to study the wetting behavior of Al-Si alloys on SiC sintered ceramic substrates under vacuum in the 700--1,100 C temperature interval. Al-Si alloys with Si concentrations up to 50% were tested. An expected non-wetting/wetting transition was observed at 900--1,000 C due to the presence of an alumina film surrounding the molten alloy. At higher temperatures wetting was observed and the Si concentration of the alloy has a marked effect on the measured contact angles, {theta}. At 1,100 C {theta} decreases from 55 to 25{degree} when instead of pure Al an Al12.3%Si or an Al16.6%Si alloy is used. The suppression of the formation of a continuous Al{sub 4}C{sub 3} layer at the interface and a process of dissolution and reconstruction of the SiC surface, due to the increased Si concentration of the Al-Si alloys, are the key factors to explain the observed behavior.

• OSTI ID: 100603
• Journal Information: Acta Metallurgica et Materialia, Journal Name: Acta Metallurgica et Materialia Journal Issue: 8 Vol. 43; ISSN 0956-7151; ISSN AMATEB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ALLOYS
ALUMINIUM OXIDES
CHEMICAL COMPOSITION
DISSOLUTION
HIGH VACUUM
INTERFACES
INTERMETALLIC COMPOUNDS
SILICON ALLOYS
SILICON CARBIDES
TEMPERATURE DEPENDENCE
WETTABILITY