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Title: The Influence of Annealing Conditions on the Growth and Structure of Embedded Pt Nanocrystals

Journal Article · · J. Appl. Phys.
DOI:https://doi.org/10.1063/1.3079506· OSTI ID:1005715

The growth and structure of Pt nanocrystals (NCs) formed by ion implantation in a-SiO{sub 2} has been investigated as a function of the annealing conditions. Transmission electron microscopy and small-angle x-ray scattering measurements demonstrate that the annealing ambient has a significant influence on NC size. Samples annealed in either Ar, O{sub 2}, or forming gas (95% N{sub 2}: 5% H{sub 2}) at temperatures ranging from 500 C-- 1300 C form spherical NCs with mean diameters ranging from 1--14 nm. For a given temperature, annealing in Ar yields the smallest NCs. O{sub 2} and forming gas ambients produce NCs of comparable size though the latter induces H chemisorption at 1100 C and above, as verified with x-ray absorption spectroscopy. This H intake is accompanied by a bond-length expansion and increased structural disorder in NCs of diameter >3 nm.

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE
OSTI ID:
1005715
Journal Information:
J. Appl. Phys., Vol. 105, Issue (4) ; 02, 2009; ISSN 0021-8979
Country of Publication:
United States
Language:
ENGLISH