Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition.

Journal Article · Mon Dec 01 04:00:00 EST 2008 · J. Exp. Theor. Phys. Lett.

DOI:https://doi.org/10.1134/S0021364008230112· OSTI ID:1004050

Baturina, T I; Mironov, A Yu; Vinokur, V M; Baklanov, M R; Strunk, C; IMEC,

We investigate the insulating phase that forms in a titanium nitride film in a close vicinity of the disorder-driven superconductor-insulator transition. In zero magnetic field the temperature dependence of the resistance reveals a sequence of distinct regimes upon decreasing temperature crossing over from logarithmic to activated behavior with the variable-range hopping squeezing in between. In perpendicular magnetic fields below 2 T, the thermally activated regime retains at intermediate temperatures, whereas at ultralow temperatures, the resistance increases faster than that of the thermally activated type. This indicates a change of the mechanism of the conductivity. We find that at higher magnetic fields the thermally activated behavior disappears and the magnetoresistive isotherms saturate towards the value close to quantum resistance h/e{sup 2}.

• Research Organization: Argonne National Laboratory (ANL)
• Sponsoring Organization: SC; Deutsche Forsdungsgemeinschaft
• DOE Contract Number: AC02-06CH11357
• OSTI ID: 1004050
• Report Number(s): ANL/MSD/JA-68835
• Journal Information: J. Exp. Theor. Phys. Lett., Journal Name: J. Exp. Theor. Phys. Lett. Journal Issue: 11 ; Dec. 2008 Vol. 88; ISSN 0021-3640
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

36 MATERIALS SCIENCE
ELECTRICAL INSULATORS
MAGNETORESISTANCE
PHASE TRANSFORMATIONS
SUPERCONDUCTORS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TITANIUM NITRIDES