Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation

Journal Article · Sat Jan 01 04:00:00 EST 2005 · MRS Internet Journal of Nitride Semiconductor Research

OSTI ID:1003371

Gu, Z ^[1]; Du, Li ^[1]; Edgar, J H ^[1]; Payzant, E Andrew ^[2]; Walker, Larry R ^[2]; Liu, R ^[3]; Engelhard, M H ^[4]

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1. Kansas State University
2. ORNL
3. Arizona State University
4. Pacific Northwest National Laboratory (PNNL)

AlN-SiC alloy crystals, with a thickness greater than 500μm, were grown on 4H- and 6H-SiC substrates from a mixture of AlN and SiC powders by the sublimation-recondensation method at 1860-1990 C. On-axis SiC substrates produced a rough surface covered with hexagonal grains, while 6H- and 4H- off-axis SiC substrates with different miscut angles (8 or 3.68 ) formed a relatively smooth surface with terraces and steps. The substrate misorientation ensured that the AlNSiC alloy crystals grew two dimensionally as identified by scanning electron microscopy (SEM). Xray diffraction (XRD) and transmission electron microscopy (TEM) confirmed that the AlN-SiC alloys had the wurtzite structure. Electron probe microanalysis (EPMA) and x-ray photoelectron spectroscopy (XPS) demonstrated that the resultant alloy crystals had non-stoichiometric ratios of Al:N and Si:C and a uniform composition throughout the alloy crystal from the interface to the surface. The composition ratio of Al:Si of the alloy crystals changed with the growth temperature, and differed from the original source composition, which was consistent with the results predicted by thermodynamic calculation of the solid-vapor distribution of each element. XPS detected the bonding between Si-C, Si-N, Si-O for the Si 2p spectra. The dislocation density decreased with the growth, which was lower than 10^6cm-2 at the alloy surface, more than two orders of magnitude lower compared to regions close to the crystal/substrate interface, as determined by TEM.

• Research Organization: Oak Ridge National Laboratory (ORNL); High Temperature Materials Laboratory
• Sponsoring Organization: EE USDOE - Office of Energy Efficiency and Renewable Energy (EE)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1003371
• Journal Information: MRS Internet Journal of Nitride Semiconductor Research, Journal Name: MRS Internet Journal of Nitride Semiconductor Research Vol. 10
• Country of Publication: United States
• Language: English