Optical Properties and Electronic Structure of Spinel ZnRh2O4
- ORNL
- University of Tennessee, Knoxville (UTK)
- Indian Institute of Technology, Roorkee
The electronic structure of normal spinel structure ZnRh2O4 is investigated using combined optical properties measurements and density functional calculations. We find semiconducting behavior with an indirect band gap between crystal field split Rh 4d levels, with a f2g valence band and an eg conduction band. The band gap is found to be ~1.2eV based on a comparison of the calculated and measured optical conductivities. The results are discussed in terms of potential photoelectrochemical applicationsdx.
- Research Organization:
- Oak Ridge National Laboratory (ORNL)
- Sponsoring Organization:
- SC USDOE - Office of Science (SC)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 1003364
- Journal Information:
- Chemistry of Materials, Journal Name: Chemistry of Materials Journal Issue: 11 Vol. 18; ISSN 1520-5002; ISSN 0897-4756
- Country of Publication:
- United States
- Language:
- English
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