Nanoscale twinning-induced elastic strengthening in silicon carbide nanowires

Journal Article · Fri Oct 22 00:00:00 EDT 2010 · Scripta Mater.

DOI:https://doi.org/10.1016/j.scriptamat.2010.07.023· OSTI ID:1002702

Lin, Z J; Wang, Lin; Zhang, Jianzhong; Guo, Xiang-Yun; Yang, Wenge; Mao, Ho-Kwang; Zhao, Yusheng ^[1]

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1. Inst. Coal Chem.

Compressibility of periodically twinned silicon carbide nanowires is studied using in situ high pressure X-ray diffraction. Twinned SiC nanowires displayed a bulk modulus of 316 GPa, {approx}20-40% higher than previously reported values for SiC of other morphologies. This finding provides direct evidence of a significant effect of twinned structures on the elastic properties of SiC on the nano scale and supports previous molecular dynamics simulations of twin boundary/stacking fault-induced strengthening. Both experiments and simulations indicate that nanoscale twinning is an effective pathway by which to tailor the mechanical properties of nanostructures.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
• Sponsoring Organization: USDOE
• OSTI ID: 1002702
• Journal Information: Scripta Mater., Vol. 63, Issue (10) ; 11, 2010; ISSN 1359-6462
• Country of Publication: United States
• Language: ENGLISH

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
COMPRESSIBILITY
ELASTICITY
MECHANICAL PROPERTIES
NANOSTRUCTURES
SILICON CARBIDES
TWINNING
X-RAY DIFFRACTION