Microwave processing of silicon carbide
Conference
·
OSTI ID:100244
- Oak Ridge National Lab., TN (United States)
- Oak Ridge Y-12 Plant, TN (United States)
Reaction-bonded silicon carbide ({alpha}-SiC) armor tiles were annealed at 2100{degree}C using microwave radiation at 2.45 GHz. Ultrasonic velocity measurements showed that the longitudinal and shear velocities, acoustic impedances, and acoustic moduli of the post-annealed tiles were statistically higher than for the unannealed tiles. However, the exposed surfaces of the annealed tiles experienced slight degradation, which was attributed to the high annealing temperatures.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- Department of the Army, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 100244
- Report Number(s):
- CONF-940782--2; ON: DE95016362
- Country of Publication:
- United States
- Language:
- English
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