Inverse and oscillatory magnetoresistance in Fe(001)/MgO/Cr/Fe magnetic tunnel junctions
Journal Article
·
· Physical Review B
- Institute of Physics, Chinese Academy of Science
- ORNL
The effect of Cr(001) insertion layers in Fe(001)/MgO/Cr/Fe magnetic tunneling junctions (MTJs) is studied from first-principles. It is shown that with the increase of the Cr(001) layer thickness, the tunneling magnetoresistance (TMR) first decreases rapidly and then oscillates with a two-monolayer period. At some thicknesses, the oscillation leads to a sign reversal of the TMR. The oscillatory interfacial Cr moment at the Cr-MgO interface as a function of the Cr layer thickness, which arises from the layer-anti-ferromagnetic ordering of Cr, is the cause for the oscillatory TMR.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1001722
- Journal Information:
- Physical Review B, Vol. 82, Issue 13; ISSN 1098--0121
- Country of Publication:
- United States
- Language:
- English
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