Cubic Silsesquioxanes as a Green, High-Performance Mold Material for Nanoimprint Lithography
Optical lithography deep in the UV spectrum is the predominate route for high-resolution, high-volume nanoscale pattering. However, state-of-the-art optical lithography tools are exceedingly expensive and this places serious limitations on the applications, technical sectors, and markets where highresolution patterning can be implemented. To date the only substantial market for high-end optical lithography tools has been semiconductor fabrication. Nanoimprint lithography (NIL) has recently emerged as an alternative to optical lithography and combines the potential of sub-fi ve-nanometer patterning resolution with the low cost and simplicity of a stamping process. [ 1–4 ] This has led to signifi cant efforts to implement NIL methods, not only for semiconductor logic devices, but also in fi elds as diverse as the direct patterning of interlayer dielectrics (ILDs) for back-end-of-line (BEOL) interconnect structures, [ 5–7 ] bitpatterned magnetic media for data storage, [ 8 , 9 ] and high-brightness light-emitting diodes (LEDs). [ 10 ] Some of these are new areas where nanoscale patterning has previously not been considered, and are made possible here by the low cost and simplicity of the NIL stamping processes.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1001124
- Report Number(s):
- PNNL-SA-75031; TRN: US201101%%855
- Journal Information:
- Advanced Materials, 23(3):414-420, Vol. 23, Issue 3
- Country of Publication:
- United States
- Language:
- English
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