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Title: Fundamental Materials Research and Advanced Process Development for Thin-Film CIS-Based Photovoltaics: Final Technical Report, 2 October 2001 - 30 September 2005

Technical Report ·
DOI:https://doi.org/10.2172/891600· OSTI ID:891600

The objectives for this thin-film copper-indium-diselenide (CIS) solar cell project cover the following areas: Develop and characterize buffer layers for CIS-based solar cell; grow and characterize chemical-bath deposition of Znx Cd1-xS buffer layers grown on CIGS absorbers; study effects of buffer-layer processing on CIGS thin films characterized by the dual-beam optical modulation technique; grow epitaxial CuInSe2 at high temperature; study the defect structure of CGS by photoluminescence spectroscopy; investigate deep-level defects in Cu(In,Ga)Se2 solar cells by deep-level transient spectroscopy; conduct thermodynamic modeling of the isothermal 500 C section of the Cu-In-Se system using a defect model; form alpha-CuInSe2 by rapid thermal processing of a stacked binary compound bilayer; investigate pulsed non-melt laser annealing on the film properties and performance of Cu(In,Ga)Se2 solar cells; and conduct device modeling and simulation of CIGS solar cells.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-99-GO10337
OSTI ID:
891600
Report Number(s):
NREL/SR-520-40568; ADJ-2-30630-13; TRN: US200622%%117
Resource Relation:
Related Information: Work performed by the University of Florida, Gainesville, Florida
Country of Publication:
United States
Language:
English