A Semiconductor Material And Method For Enhancing Solubility Of A Dopant Therein

Patent · Tue Mar 29 00:00:00 EST 2005

OSTI ID:880131

Sadigh, Babak ^[1]; Lenosky, Thomas J ^[2]; Giles, Martin ^[3]; Caturla, Maria-Jose ^[4]; Ozolins, Vidvuds ^[2]; Asta, Mark ^[5]; Theiss, Silva ^[6]; Foad, Majeed ^[7]; Quong, Andrew ^[4]

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1. Oakland, CA
2. Pleasanton, CA
3. Hillsborough, OR
4. Livermore, CA
5. Evanston, IL
6. St. Paul, MN
7. Santa Clara, CA

A method for enhancing the equilibrium solubility of boron ad indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

• Research Organization: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
• DOE Contract Number: W-7405-ENG-48
• Assignee: The Regents of the University of California (Oakland, CA)
• Patent Number(s): US 6872455
• Application Number: 10/626132
• OSTI ID: 880131
• Country of Publication: United States
• Language: English