Method for enhancing the solubility of boron and indium in silicon
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- Pleasanton, CA
- Hillsborough, OR
- Livermore, CA
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- Santa Clara, CA
A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- US 6498078
- OSTI ID:
- 874958
- Country of Publication:
- United States
- Language:
- English
Point defects and dopant diffusion in silicon
|
journal | April 1989 |
Inhomogeneous Electron Gas
|
journal | November 1964 |
Self-Consistent Equations Including Exchange and Correlation Effects
|
journal | November 1965 |
Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study
|
journal | November 1999 |
DEVICE PHYSICS:Pushing the Limits
|
journal | September 1999 |
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enhancing
solubility
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involves
first-principles
quantum
mechanical
calculations
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p-type
dopants
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strain
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thermodynamic
size-mismatched
impurities
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substrate
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appropriately
example
compressive
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1100degree
tensile
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