skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Conductive metal oxide film and method of making

Patent ·
OSTI ID:872690
 [1]
  1. Richland, WA
+ Show Author Affiliations

The present invention is a method for reducing a dopant in a film of a metal oxide wherein the dopant is reduced and the first metal oxide is substantially not reduced. The method of the present invention relies upon exposing the film to reducing conditions for a predetermined time and reducing a valence of the metal from a positive valence to a zero valence and maintaining atoms with a zero valence in an atomic configuration within the lattice structure of the metal oxide. According to the present invention, exposure to reducing conditions may be achieved electrochemically or achieved in an elevated temperature gas phase.

Research Organization:
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
DOE Contract Number:
AC06-76RL01830
Assignee:
Battelle Memorial Institute (Richland, WA)
Patent Number(s):
US 5990416
OSTI ID:
872690
Country of Publication:
United States
Language:
English

References (4)

The Influence of Preparation on Semiconducting Rutile  ( TiO2 )  journal May 1980
Optical Properties of Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering journal August 1985
Electrochemically Reduced Polycrystalline Tin Oxide Thin Films: Surface Analysis and Electroplated Copper Adhesion journal June 1996
Reduction of CO[sub 2] on Fluorine-Doped SnO[sub 2] Thin-Film Electrodes journal January 1992

Similar Records

Conductive metal oxide film and method of making
Patent · Tue Nov 23 00:00:00 EST 1999 · OSTI ID:872690
Post-Deposition Induced Conductivity in Pulsed Laser Irradiated Metal Doped Zinc Oxide Films
Journal Article · Thu Dec 03 00:00:00 EST 2009 · Journal of Young Investigators, 19(18):1-28 · OSTI ID:872690
Water Splitting by Thin Film Metal-Oxo Catalysts
Technical Report · Fri Mar 15 00:00:00 EDT 2013 · OSTI ID:872690

Related Subjects

conductive
metal
oxide
film
method
reducing
dopant
reduced
substantially
relies
exposing
conditions
predetermined
time
valence
positive
zero
maintaining
atoms
atomic
configuration
lattice
structure
according
exposure
achieved
electrochemically
elevated
temperature
gas
phase
temperature gas
predetermined time
gas phase
metal oxide
elevated temperature
oxide film
conductive metal
lattice structure
reducing conditions
positive valence
determined time
/136/438/