Thick, low-stress films, and coated substrates formed therefrom
- Menomonee Falls, WI
Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.
- Research Organization:
- Battelle Memorial Institute, Columbus, OH (United States)
- DOE Contract Number:
- AC06-76RL01830
- Assignee:
- Battelle Memorial Institute (Richland, WA)
- Patent Number(s):
- US 5061574
- OSTI ID:
- 868050
- Country of Publication:
- United States
- Language:
- English
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