Self- and dopant diffusion in extrinsic boron doped isotopically controlled silicon multilayer structures
Isotopically controlled silicon multilayer structures were used to measure the enhancement of self- and dopant diffusion in extrinsic boron doped silicon. {sup 30}Si was used as a tracer through a multilayer structure of alternating natural Si and enriched {sup 28}Si layers. Low energy, high resolution secondary ion mass spectrometry (SIMS) allowed for simultaneous measurement of self- and dopant diffusion profiles of samples annealed at temperatures between 850 C and 1100 C. A specially designed ion- implanted amorphous Si surface layer was used as a dopant source to suppress excess defects in the multilayer structure, thereby eliminating transient enhanced diffusion (TED) behavior. Self- and dopant diffusion coefficients, diffusion mechanisms, and native defect charge states were determined from computer-aided modeling, based on differential equations describing the diffusion processes. We present a quantitative description of B diffusion enhanced self-diffusion in silicon and conclude that the diffusion of both B and Si is mainly mediated by neutral and singly positively charged self-interstitials under p-type doping. No significant contribution of vacancies to either B or Si diffusion is observed.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division; National Science Foundation Grant DMR-0109844; State of California UC-SMART Program SM97-01 (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 840970
- Report Number(s):
- LBNL-50012; R&D Project: 513310; TRN: US200513%%190
- Resource Relation:
- Conference: 2002 MRS Spring Meeting, San Francisco, CA (US), 04/01/2002--04/05/2002; Other Information: PBD: 1 Apr 2002
- Country of Publication:
- United States
- Language:
- English
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