Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices
GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.
- Research Organization:
- Lockheed Martin Corporation, Schenectady, NY 12301 (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC12-00SN39357
- OSTI ID:
- 821870
- Report Number(s):
- LM-03K061; TRN: US200411%%761
- Resource Relation:
- Other Information: PBD: 16 Jun 2003
- Country of Publication:
- United States
- Language:
- English
Similar Records
Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices
Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices