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Title: The CDF Run IIb Silicon Detector

Conference ·
OSTI ID:821551

Fermilab plans to deliver 5-15 fb{sup -1} of integrated luminosity to the CDF and D0 experiments. The current inner silicon detectors at CDF (SVXIIa and L00) will not tolerate the radiation dose associated with high luminosity running and will need to be replaced. A new readout chip (SVX4) has been designed in radiation-hard 0.25 {micro}m CMOS technology. Single sided sensors are arranged in a compact structure, called a stave, with integrated readout and cooling systems. This paper describes the general design of the Run IIb system, testing results of prototype electrical components (staves), and prototype silicon sensor performance before and after irradiation.

Research Organization:
Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
Sponsoring Organization:
USDOE Office of Energy Research (ER) (US)
DOE Contract Number:
AC02-76CH03000
OSTI ID:
821551
Report Number(s):
FERMILAB-Conf-03/385-E; TRN: US0400825
Resource Relation:
Conference: 9th Pisa Meeting on Advanced Detectors: Frontier Detectors for Frontier Physics, La Iodole, Iola delta (IT), 05/25/2003--05/31/2003; Other Information: PBD: 25 Feb 2004
Country of Publication:
United States
Language:
English

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