The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC
Conference
·
OSTI ID:771405
Results are reported for the passivation of interface states near the conduction band edge in SiO{sub 2}/SiC MOS capacitors using post-oxidation anneals in nitric oxide, ammonia and forming gas (N{sub 2}5%H{sub 2}). Anneals in nitric oxide and ammonia reduce the interface state density significantly for 4H-SiC, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO{sub 2}/SiC and SiO{sub 2}/SiC have different origins, and a model is described for interface state passivation by nitrogen in the SiO{sub 2}/SiC system. The peak inversion channel mobility measured for lateral 4H-SiC MOSFETs increases following NO passivation.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (US)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 771405
- Report Number(s):
- P00-108517; TRN: AH200104%%317
- Resource Relation:
- Conference: Fifth International High Temperature Electronics Conference (HiTEC), Albuquerque, NM (US), 06/12/2000--06/15/2000; Other Information: PBD: 12 Jun 2000
- Country of Publication:
- United States
- Language:
- English
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