AlGaAs/InGaAsN/GaAs PnP double heterojunction bipolar transistor

Journal Article · Tue Jan 11 00:00:00 EST 2000

OSTI ID:750197

Chang, P C; Baca, A G; Li, N Y; Sharps, P R; Hou, H Q; Laroche, J R; Ren, F

The authors have demonstrated a functional MOCVD-grown AlGaAs/InGaAsN/GaAsPnP DHBT that is lattice matched to GaAs and has a peak current gain ({beta}) of 25. Because of the smaller bandgap (E{sub g}=1.20eV)of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} used for the base layer, this device has a low V{sub ON} of 0.79 V, 0.25 V lower than in a comparable Pnp AlGaAs/GaAs HBT. The BV{sub CEO} is 12 V, consistent with its GaAs collector thickness and doping level.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 750197
• Report Number(s): SAND2000-0126J; TRN: AH200008%%62
• Resource Relation: Other Information: Submitted to Electronics Letters; PBD: 11 Jan 2000
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
JUNCTION TRANSISTORS
HETEROJUNCTIONS
CHEMICAL VAPOR DEPOSITION
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
GALLIUM NITRIDES
INDIUM NITRIDES
GAIN
ENERGY GAP
PERFORMANCE