New HVEM for materials research at ANL

Conference · Sat Jan 01 00:00:00 EST 1977

OSTI ID:7291350

Lyles, R. L.; Merkle, K. L.; Okamoto, P.

The Argonne National Laboratory HVEM facility will be used primarily in support of basic materials studies on problems of interest to various energy technologies. The nucleus of the ANL facility is an improved AEI EM-7 high-voltage electron microscope with an accelerating voltage of 1.2 MV and a guaranteed resolution of 5 A point-to-point. The installation of this instrument is the first step in the development of a materials research laboratory, which, when completed, will include interfaces with a 2-MV tandem accelerator and a low-energy ion injector for in-situ ion-irradiation and ion-beam analysis experiments. In addition to the HVEM-ion-accelerator link, several features that will significantly enhance the usefulness of the instrument for materials research have been incorporated into its design. These include direct ion pumping of the high vacuum specimen chamber with a vacuum level of 10/sup -7/ torr, a negative-ion trap, instrumentation for the selection of two independently adjustable dark-field conditions, facilities for continuous-mode acdelerating voltage selection at the operator console, and a special Swann-type environmental chamber. Also, a low-temperature, side-entry He stage is being designed and constructed at ANL. The He stage is intended to be used for observation as well as in-situ residual-resistivity measurements below 10 K. In addition to the He stage, a separate low-temperature (<20 K) cold shield and anticontaminator is being designed that will permit cryogenic pumping with standard stages.

• Research Organization: Argonne National Lab., Ill. (USA)
• Sponsoring Organization: USDOE
• DOE Contract Number: W-31-109-ENG-38
• OSTI ID: 7291350
• Report Number(s): CONF-770855-2; TRN: 78-000374
• Resource Relation: Conference: 5. international conference on high voltage electron microscopy, Kyoto, Japan, 29 Aug 1977
• Country of Publication: United States
• Language: English

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