Quantitative Auger electron analysis of gold--copper alloys
Quantitative Auger electron analysis was established for gold (7 to 80 atomic percent)--copper alloys. The procedure for preparing samples must include uniform metallographic polishing and final sputter etching before Auger analysis. A 30-second sputter etch in argon is required to minimize the effects of surface contaminants. Beam current and potential were systematically varied to determine their effects on the resulting analysis. No significant effect was found when the beam potential was varied from 3 to 5 keV. However, the data obtained at one potential could not be compared to data at another potential. The data presented were obtained at 4 keV beam potential unless otherwise indicated. The beam current was varied from 40 to 60 uA. The most accurate results are obtained by using the lowest possible beam current; currently, there is no explanation for this observation. To obtain accurate quantitative analysis, a data reduction technique was used. This procedure involves calculating an inverse auger sensitivity (..cap alpha..) and a matrix effect factor (M). With these values determined from pure and alloy standards, an unknown composition can be determined using the following equation: X/sub Au/ = M/sub Au/ ..cap alpha../sub Au/I/sub Au//(..cap alpha../sub Au/I/sub Au/ + ..cap alpha../sub Cu/I/sub Cu), where, X/sub Au/ = atomic percent gold; M/sub Au/ = gold matrix effect factor; ..cap alpha../sub Au/ = gold inverse Auger sensitivity factor;..cap alpha../Cu/ = copper inverse Auger sensitivity factor; I/sub Au/ = Auger intensity of gold; and I/sub Cu/ = Auger intensity of copper. Using this procedure Auger-determined gold-copper contents are consistent with values obtained by wet chemical analysis and electron microprobe analysis. (auth)
- Research Organization:
- Bendix Corp., Kansas City, MO (United States)
- DOE Contract Number:
- AT(29-1)-613
- OSTI ID:
- 7193482
- Report Number(s):
- BDX-613-1466(Rev.)
- Country of Publication:
- United States
- Language:
- English
Similar Records
Cuprous oxide--indium--tin oxide thin film photovoltaic cells
Development of SRF monolayer/multilayer thin film materials to increase the performance of SRF accelerating structures beyond bulk Nb