In situ ion irradiation/implantation studies in the HVEM-Tandem Facility at Argonne National Laboratory
The HVEM-Tandem User Facility at Argonne National Laboratory interfaces two ion accelerators, a 2 MV tandem accelerator and a 650 kV ion implanter, to a 1.2 MV high voltage electron microscope. This combination allows experiments involving simultaneous ion irradiation/ion implantation, electron irradiation and electron microscopy/electron diffraction to be performed. In addition the availability of a variety of microscope sample holders permits these as well as other types of in situ experiments to be performed at temperatures ranging from 10-1300 K, with the sample in a stressed state or with simultaneous determination of electrical resistivity of the specimen. This paper summarizes the details of the Facility which are relevant to simultaneous ion beam material modification and electron microscopy, presents several current applications and briefly describes the straightforward mechanism for potential users to access this US Department of Energy supported facility. 7 refs., 1 fig., 1 tab.
- Research Organization:
- Argonne National Lab., IL (USA)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 6585098
- Report Number(s):
- CONF-881151-45; ON: DE89004284
- Resource Relation:
- Conference: International conference on the application of accelerators in research and industry, Denton, TX, USA, 7 Nov 1988; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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MATERIALS
PHYSICAL RADIATION EFFECTS
TANDEM ELECTROSTATIC ACCELERATORS
ION IMPLANTATION
AMORPHOUS STATE
ELECTRON BEAMS
ELECTRON MICROSCOPY
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