skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: MIS solar cells on thin polycrystalline silicon. Progress report No. 3, September 1-November 30, 1980

Technical Report ·
DOI:https://doi.org/10.2172/6550291· OSTI ID:6550291

The first task of this project involves electron-beam deposition of thin silicon films on low cost substrates. The goal is to obtain 20 ..mu..m thick films having 20 ..mu..m diameter crystallites which may be recrystallized to > 40 ..mu..m. Material characterization and device studies are to be included in efforts to reach a 6% conversion efficiency. The second task deals with MIS solar cell fabrication on various types of silicon including poly-Si, ribbon-Si, silicon on ceramic, and thin film silicon. Conduction mechanism studies, optimum engineering design, and modification of the fabrication process are to be used to achieve 13% efficiency on Xtal-Si and 11% efficiency on poly-Si. The third task involves more detailed test procedures and includes spectral response, interface and grain boundary effects, computer analysis, materials studies, and grain boundary passivation. Progress is detailed. (WHK)

Research Organization:
State Univ. of New York, Buffalo (USA). Dept. of Electrical Engineering
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6550291
Report Number(s):
SERI/PR-9080-1-T3
Country of Publication:
United States
Language:
English