Characterizing and modeling the apparent anomalous behavior of resistivity in Cr-Si-O thin films
The Cr-Si-O material system is of interest for use as a thin film resistor. The films are sputter deposited onto conducting substrates from metal oxide compacts using a reactive gas mixture. the cermet films composition range from 50 to 100 vol.% SiO{sub 2} as determined from elemental measurements of the Cr, Si and O content. In a wide range of resistivities from 10{sup 1} to 10 {sup 14} {omega}-cm measured through the film thickness, an apparent anomalous behavior is found with the Cr, Si and O composition. The anomaly can be deducted to a discontinuous variation of resistivity with film composition near 80 vol.% SiO{sub 2}. The film microstructure is characterized as a distribution of conducting metal-silicide particles within an insulating matrix. The effective medium theory is used to predict the variation of conductivity and successfully models the anomalous resistivity behavior.
- Research Organization:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- Sponsoring Organization:
- USDOE Office of Financial Management and Controller, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 651583
- Report Number(s):
- UCRL-JC-130073; CONF-980429-; ON: DE98054784; BR: YN0100000
- Resource Relation:
- Conference: American Vacum Society conference on thin solid films (TSF) and surface and coatings technology (SCT), San Diego, CA (United States), 27 Apr - 1 May 1998; Other Information: PBD: 1 Mar 1998
- Country of Publication:
- United States
- Language:
- English
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