Thin films of gallium arsenide on low-cost substrates. Final report, July 5, 1976--July 2, 1977

Technical Report · Mon Aug 01 00:00:00 EDT 1977

DOI:https://doi.org/10.2172/6313286· OSTI ID:6313286

Ruth, R. P.; Dapkus, P. D.; Dupuis, R. D.; Campbell, A. G.; Johnson, R. E.; Manasevit, H. M.; Moudy, L. A.; Yang, J. J.; Yingling, R. D.

The metalorganic chemical vapor deposition (MO-CVD) technique has been applied to the growth of thin films of GaAs and GaAlAs on inexpensive polycrystalline or amorphous substrate materials (glasses, glass-ceramics, alumina ceramics, and metals) for use in fabrication of large-area low-cost photovoltaic device structures. Trimethylgallium (TMG), arsine (AsH/sub 3/), and trimethylaluminum (TMAl) are mixed in appropriate concentrations at room temperature in the gaseous state and pyrolyzed at the substrate, which is heated in a vertical reactor chamber to temperature in the range 600 to 800/sup 0/C, to produce the desired film composition and properties. Of ten candidate low-cost substrates initially identified for investigation, Corning Code 0317 glass and composites of CVD Ge/glass and sputtered Mo/glass were found to be the most satisfactory, the latter eventually serving as a reference substrate against which to compare the performance of other substrates. Single-crystal window-type solar cells, polycrystalline Schottky-barrier cells, and deposited-junction polycrystalline cells have been grown, fabricated, and characterized. Epitaxial GaAlAs/GaAs p-n junction cells with thin (approx. 500A) Ga/sub 0/ /sub 2/Al/sub 0/ /sub 8/As windows and GaAs:Zn - GaAs:Se junctions were made with AMO efficiencies as high as 12.8 percent with no AR coating. Schottky barrier cells with efficiencies of 2.25 percent AMO (no AR coating) have been made on n/n polycrystalline GaAs structures on Mo/glass composite substrates, with short-circuit current densities up to 12.5 mA/cm/sup 2/. Also, results of analyses of material and processing costs associated with fabrication of thin-film GaAlAs/GaAs solar cells by the MO-CVD process are discussed.

• Research Organization: Rockwell International Corp., Anaheim, CA (USA). Electronic Devices Div.
• DOE Contract Number: EY-76-C-03-1202
• OSTI ID: 6313286
• Report Number(s): SAN-1202-77/3
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
GALLIUM ARSENIDE SOLAR CELLS
FABRICATION
GALLIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
MICROSTRUCTURE
ALUMINIUM ARSENIDES
CHEMICAL REACTORS
COST
CRYSTAL GROWTH
ECONOMIC ANALYSIS
ELECTRON MICROSCOPY
FILMS
GRAIN SIZE
MATERIALS
MONOCRYSTALS
POLYCRYSTALS
PRODUCTION
RESEARCH PROGRAMS
SUBSTRATES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
DIRECT ENERGY CONVERTERS
ECONOMICS
GALLIUM COMPOUNDS
MICROSCOPY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
SIZE
SOLAR CELLS
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation & Manufacture