Evaluation of FOXFET biased ac-coupled silicon strip detector prototypes for CDF SVX upgrade
- Fermi National Accelerator Lab., Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland)
Silicon microstrip detectors for high-precision charged particle position measurements have been used in nuclear and particle physics for years. The detectors have evolved from simple surface barrier strip detectors with metal strips to highly complicated double-sided AC-coupled junction detectors. The feature of AC-coupling the readout electrodes from the diode strips necessitates the manufacture of a separate biasing structure for the strips, which comprises a common bias line together with a means for preventing the signal from one strip from spreading to its neighbors through the bias line. The obvious solution to this is to bias the strips through individual high value resistors. These resistors can be integrated on the detector wafer by depositing a layer of resistive polycrystalline silicon and patterning it to form the individual resistors. To circumvent the extra processing step required for polysilicon resistor processing and the rather difficult tuning of the process to obtain uniform and high enough resistance values throughout the large detector area, alternative methods for strip biasing have been devised. These include the usage of electron accumulation layer resistance for N{sup +}{minus} strips or the usage of the phenomenon known as the punch-through effect for P{sup +}{minus} strips. In this paper we present measurement results about the operation and radiation resistance of detectors with a punch-through effect based biasing structure known as a Field OXide Field-Effect Transistor (FOXFET), and present a model describing the FOXFET behavior. The studied detectors were prototypes for detectors to be used in the CDF silicon vertex detector upgrade.
- Research Organization:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC02-76CH03000
- OSTI ID:
- 5749780
- Report Number(s):
- FNAL-TM-1772; ON: DE92010395
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
42 ENGINEERING
FERMILAB COLLIDER DETECTOR
SI SEMICONDUCTOR DETECTORS
FIELD EFFECT TRANSISTORS
EVALUATION
HUMIDITY
MODIFICATIONS
NOISE
PHYSICAL RADIATION EFFECTS
MEASURING INSTRUMENTS
RADIATION DETECTORS
RADIATION EFFECTS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
TRANSISTORS
440104* - Radiation Instrumentation- High Energy Physics Instrumentation
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)