X-ray diffraction study of GaSb/AlSb strained-layer-superlattices grown on miscut (100) substrates
- Argonne National Lab., IL (United States)
- AT and T Bell Labs., Murray Hill, NJ (United States)
A series of superlattices were grown by molecular beam epitaxy on (100) GaSb substrates which had been miscut by 2, 3, and 4 degrees toward the <011> direction. These superlattices were then studied by scanning all possible (444) or (511) (asymmetric) reflections with high resolution multiple-crystal x-ray diffractometry. In addition, the (400) (quasi-symmetric) reflection was scanned. From peak splittings we extracted mismatch and tilt parameters for the epitaxial unit cell. We compared our results for the non-tetragonal component of the distortion ot calculations based on the coherent strain model of Hornstra and Bartels (J. Cryst. Growth 44,513 (1978)). We find that this model which was developed for epitaxial growth on a general (hkl) plane also describes our results for growth on vicinal (100) planes. The resolution of our data is sufficient to establish that the distortion was not purely tetragonal. A monoclinic unit cell symmetry adequately describes our results.
- Research Organization:
- Argonne National Lab., IL (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 5545037
- Report Number(s):
- ANL/CP-72290; CONF-9107115-73; ON: DE92009734
- Resource Relation:
- Conference: Society of Photo-Optical Instrumentation Engineers (SPIE) meeting, San Diego, CA (United States), 21-26 Jul 1991
- Country of Publication:
- United States
- Language:
- English
Similar Records
The growth of GaSb/Al{sub 0.33}Ga{sub 0.67}Sb MQW on n-Silicon (1 0 0) with Al{sub 0.66}Ga{sub 0.34}Sb/AlSb SPS layers
Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy
Related Subjects
GALLIUM ANTIMONIDES
INTERFACES
X-RAY DIFFRACTION
SUBSTRATES
ALUMINIUM COMPOUNDS
ANTIMONIDES
CRYSTAL GROWTH
MOLECULAR BEAM EPITAXY
SUPERLATTICES
ANTIMONY COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
EPITAXY
GALLIUM COMPOUNDS
PNICTIDES
SCATTERING
360602* - Other Materials- Structure & Phase Studies