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Title: Investigation of photovoltaic mechanisms in polycrystalline thin-film solar cells. Interim technical report, November 1, 1980-July 31, 1981

Technical Report ·
DOI:https://doi.org/10.2172/5356231· OSTI ID:5356231

Effort is reported on measurement technique development to assess the utility of Deep-Level Transient Spectroscopy (DLTS) methods in characterizing polycrystalline silicon that was deliberately doped with Ti during growth. Difficulties encountered with lateral DLTS measurements are discussed. In this approach, modulation of the grain boundary, double-depletion region produces the entire DLTS signal. Major effort has been applied in grain boundary characterization and control. The most significant accomplishments to date have involved laser scanning of slices of Wacker SILSO polysilicon having nearly identical grain structure. By using various kinds of treatments and by comparing treated and untreated substrates having nearly identical grain structure, control of grain boundary photocurrent suppression (..delta..I/sub ph/) over the range 1% less than or equal to ..delta..I/sub ph/ less than or equal to 40% was demonstrated.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States); Westinghouse Research and Development Center, Pittsburgh, PA (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5356231
Report Number(s):
SERI/PR-9233-1-T2; ON: DE82013338
Country of Publication:
United States
Language:
English