Thin film gold etchant formulation and rinse removal. Final report
The chemistry of gold etchant solutions used in photolithography of thin film networks (TFNs) for hybrid microcircuits was reviewed. The formulation and operating limits were revised to ensure that the initial solution makeup is always within required values for iodine concentration and specific gravity and that the etchant will not be used for an extended period of time. Rinsing procedures for removal of the gold etchant from the TFNs were evaluated. Increasing the rinse time beyond 15 seconds in deionized water does not significantly improve the removal of iodine. Nitrogen bubble burst, increased temperature of the rinse water, methyl alcohol rinse, and potassium iodide solution prerinse were shown to be effective in improving the rinse removal of iodine. Production requirements for stripping time for wet photoresist were shown to be more than three times longer than necessary to ensure that the photoresist was completely removed.
- Research Organization:
- Bendix Corp., Kansas City, MO (United States)
- DOE Contract Number:
- AC04-76DP00613
- OSTI ID:
- 5278922
- Report Number(s):
- BDX-613-2393
- Country of Publication:
- United States
- Language:
- English
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