Power ratings of rf thin film resistive attenuators
Most radio frequency (rf) assemblies built using hybrid microcircuit technology employ thin film attenuators. These attenuators are subject to moderate rf peak power and to moderate average power. Because of intracircuit mismatch, extra considerations of power requirements must be given. To meet these requirements, selected thin film resistive attenuators operated under large rf power conditions were investigated, and the power margin in which these attenuators can be used was defined.
- Research Organization:
- Bendix Corp., Kansas City, MO (United States)
- DOE Contract Number:
- AC04-76DP00613
- OSTI ID:
- 5268769
- Report Number(s):
- BDX-613-2404
- Country of Publication:
- United States
- Language:
- English
Similar Records
Low temperature rf sputtering deposition of (Ba, Sr) TiO{sub 3} thin film with crystallization enhancement by rf power supplied to the substrate
Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power
Effect of RF power and annealing on chemical bonding and morphology of a-CN{sub x} thin films as humidity sensor
Journal Article
·
Sun May 01 00:00:00 EDT 2005
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:5268769
+1 more
Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power
Journal Article
·
Fri Mar 15 00:00:00 EDT 2019
· Optical and Quantum Electronics
·
OSTI ID:5268769
Effect of RF power and annealing on chemical bonding and morphology of a-CN{sub x} thin films as humidity sensor
Journal Article
·
Wed Nov 27 00:00:00 EST 2013
· AIP Conference Proceedings
·
OSTI ID:5268769
+2 more