skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Task B: Research on stable high-efficiency, large area, amorphous silicon-based solar cells

Technical Report ·
DOI:https://doi.org/10.2172/5206295· OSTI ID:5206295

This document describes photovoltaic research conducted in four areas: semiconductor materials, high-efficiency cells, nonsemiconductor materials, and submodules. The major focus of semiconductor materials research was on improving the quality of wide-band-gap a-SiC:H alloys and narrow-band-gap a-SiGe:H alloys. Raman spectroscopy suggested that the alloys are inhomogeneous, showing a higher concentration of Ge-Ge bonds than expected from a random mixing model. In high-efficiency device research, silicon-carbon single-junction cells resulted in open-circuit voltages as high as 0.96 V with a higher than 0.6 fill factor. Silicon-germanium cells show far better performance using a p/i-graded interface, an i(a-Si)/i(a-SiGe)-graded interface, and an inverse-graded interface at the i/n junction along with an a-Si n-layer compared with an a-SiGe:H n-layer. In the nonsemiconductor materials research, modeling optical enhancement of long-wavelength light in single-junction cells suggested that several parasitic losses are present in the device structure. In most cases, absorption in the rear contact is the major loss mechanism. In submodule research, the focus was on developing high-efficiency a-Si:H single-junction modules, stable a-Si:H stacked-junction modules, high-efficiency alloy-stacked modules, and advanced laser scribing processes. 74 figs., 13 tabs.

Research Organization:
Solar Energy Research Inst. (SERI), Golden, CO (United States); Solarex Corp., Newtown, PA (USA). Thin Film Div.
Sponsoring Organization:
DOE/CE
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5206295
Report Number(s):
SERI/STR-211-3580; ON: DE89009491
Country of Publication:
United States
Language:
English