Implantation activation annealing of Si-implanted gallium nitride at temperatures > 1,100 C
- and others
The activation annealing of Si-implanted GaN is reported for temperatures from 1,100 to 1,400 C. Although previous work has shown that Si-implanted GaN can be activated by a rapid thermal annealing at {approximately}1,100 C, it was also shown that significant damage remained in the crystal. Therefore, both AlN-encapsulated and uncapped Si-implanted GaN samples were annealed in a metal organic chemical vapor deposition system in a N{sub 2}/NH{sub 3} ambient to further assess the annealing process. Electrical Hall characterization shows increases in carrier density and mobility for annealing up to 1,300 C before degrading at 1,400 C due to decomposition of the GaN epilayer. Rutherford backscattering spectra show that the high annealing temperatures reduce the implantation induced damage profile but do not completely restore the as-grown crystallinity.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Office of Naval Research, Washington, DC (United States); Defense Advanced Research Projects Agency, Arlington, VA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 486172
- Report Number(s):
- SAND-97-1134C; CONF-970302-10; ON: DE97007590; CNN: Grant NSF DMR-9421109; Grant ONR N00014-92-5-1895; TRN: 97:011314
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997; Other Information: PBD: [1997]
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ultra-high implant activation efficiency in GaN using novel high temperature RTP system
Doping of GaN by ion implantation: Does It Work?