Application of PECVD for bulk and surface passivation of high efficiency silicon solar cells

Conference · Tue Aug 01 00:00:00 EDT 1995

OSTI ID:415143

Krygowski, T; Doshi, P; Cai, L; Doolittle, A; Rohatgi, A ^[1]

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1. Georgia Inst. of Technology, Atlanta, GA (United States)

Plasma enhanced chemical vapor deposition (PECVD) passivation of bulk and surface defects has been shown to be an important technique to improve the performance of multicrystalline silicon (mc-Si) and single crystalline silicon solar cells. In this paper, we report the status of our on-going investigation into the bulk and surface passivation properties of PECVD insulators for photovoltaic applications. The objective of this paper is to demonstrate the ability of PECVD films to passivate the front (emitter) surface, bulk, and back surface by proper tailoring of deposition and post-PECVD annealing conditions.

• Research Organization: National Renewable Energy Lab. (NREL), Golden, CO (United States)
• OSTI ID: 415143
• Report Number(s): NREL/SP-413-8250; CONF-9508143-Extd.Absts.; ON: DE95009278; TRN: 96:006512-0027
• Resource Relation: Conference: 5. workshop on the role of impurities and defects in silicon device processing, Copper Mountain, CO (United States), 13-16 Aug 1995; Other Information: PBD: Aug 1995; Related Information: Is Part Of Fifth workshop on the role of impurities and defects in silicon device processing. Extended abstracts; Sopori, B.L.; Luque, A.; Sopori, B.; Swanson, D.; Gee, J.; Kalejs, J.; Jastrzebski, L.; Tan, T.; PB: 160 p.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
SILICON SOLAR CELLS
ELECTRICAL PROPERTIES
ANTIREFLECTION COATINGS
OPTICAL PROPERTIES
SILICON NITRIDES
CHEMICAL VAPOR DEPOSITION
EFFICIENCY
FILMS
IMPURITIES
PASSIVATION
ANNEALING
SILICA