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Title: Radiation blistering of Nb implanted sequentially with helium ions of different energies (3-500 keV)

Conference ·
OSTI ID:4067613

Cold rolled, polycrystalline niobium samples were irradiated at room temperature with $sup 4$He$sup +$ ions sequentially at 14 different energies over an energy range from 3 keV--500 keV in steps of 50 keV. The dose for each energy was chosen to give an approximately uniform concentration of helium between the implant depths corresponding to 3 keV and 500 keV. In one set of experiments the irradiations were started at the Kurchatov Institute with 3 keV $sup 4$He$sup +$ ions and extended up to 80 keV in several steps. Subsequently, the same target area was irradiated with $sup 4$He$sup +$ ions at Argonne National Laboratory (ANL) starting at 100 keV and increased to 500 keV in steps of 50 keV. Another set of irradiations were started at ANL with 500 keV $sup 4$He$sup +$ ions and continued with decreasing ion energies to 100 keV. Subsequently, the same area was irradiated at the Kurchatov Institute starting at 80 keV and continued with decreasing ion energies to 3 keV. Both sets of irradiations were completed for two different total doses, 0.5 C cm$sup -2$ and 1.0 C cm$sup -2$.

Research Organization:
Argonne National Lab., Ill. (USA)
DOE Contract Number:
W-31-109-ENG-38
NSA Number:
NSA-33-022986
OSTI ID:
4067613
Report Number(s):
CONF-760209-13
Resource Relation:
Conference: 2. international conference on surface effects in controlled fusion devices, San Francisco, California, United States of America (USA), 16 Feb 1976; Other Information: Orig. Receipt Date: 30-JUN-76
Country of Publication:
United States
Language:
English