Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy
This is the final report of a two-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project successfully developed a magnetic resonance force microscope (MRFM) instrument to mechanically detect magnetic resonance signals. This technique provides an intrinsically subsurface, chemical-species-specific probe of structure, constituent density and other properties of materials. As in conventional magnetic resonance imaging (MRI), an applied magnetic field gradient selects a well defined volume of the sample for study. However mechanical detection allows much greater sensitivity, and this in turn allows the reduction of the size of the minimum resolvable volume. This requires building an instrument designed to achieve nanometer-scale resolution at buried semiconductor interfaces. High-resolution, three-dimensional depth profiling of semiconductors is critical in the development and fabrication of semiconductor devices. Currently, there is no capability for direct, high-resolution observation and characterization of dopant density, and other critical features of semiconductors. The successful development of MRFM in conjunction with modifications to improve resolution will enable for the first time detailed structural and electronic studies in doped semiconductors and multilayered nanoelectronic devices, greatly accelerating the current pace of research and development.
- Research Organization:
- Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 380356
- Report Number(s):
- LA-UR-96-3253; ON: DE97000288; TRN: 96:005717
- Resource Relation:
- Other Information: PBD: [1996]
- Country of Publication:
- United States
- Language:
- English
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