Thermal cycling characteristics of plasma synthesized mullite films
- Lawrence Berkeley National Lab., CA (United States)
The authors have developed a plasma-based technique for the synthesis of mullite and mullite-like films on silicon carbide substrate material. The method, which they refer to as MePIIID (for Metal Plasma Immersion Ion Implantation and Deposition), uses two vacuum arc plasma sources and simultaneous pulse biasing of the substrate in a low pressure oxygen atmosphere. The Al:Si ratio can be controlled via the separate plasma guns, and the film adhesion, structure and morphology can be controlled via the ion energy which in turn is controlled by the pulse bias voltage. The films are amorphous as-deposited, and crystalline mullite is formed by subsequent annealing at 1000 C for 2 hours in air. Adhesion between the aluminum-silicon oxide film and the substrate increases after this first annealing. They have tested the behavior of films when subjected to repetitive thermal cycling between room temperature and 1100 C, and found that the films retain their adhesion and quality. Here they review the plasma synthesis technique and the characteristics of the mullite films prepared in this way, and summarize the status of the thermal cycling experiments.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 330667
- Report Number(s):
- CONF-9705115-PROC.; ORNL/FMP-97/1; ON: DE98007329; TRN: IM9915%%184
- Resource Relation:
- Conference: 11. annual conference on fossil energy materials, Knoxville, TN (United States), 20-22 May 1997; Other Information: PBD: Dec 1997; Related Information: Is Part Of Proceedings of the eleventh annual conference on fossil energy materials; Judkins, R.R. [comp.]; PB: 419 p.
- Country of Publication:
- United States
- Language:
- English
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